In a world where miniaturization leads technology advancement, extreme ultraviolet (EUV) light is becoming the tool for leading companies to increase the number of transistors on a chip. EUV light is generated via laser-produced plasma (LPP), that is currently driven by 10.6 m CO 2 lasers, due to their high demonstrated conversion efficiency (CE) from laser power to EUV. In terms of laser technology, solid-state lasers based on Nd:YAG, operating around 1m wavelength have significant advantages in terms of efficiency, stability and control over temporal pulse shape and contrast. However, so far they provide lower CE than CO 2 lasers [1] , even though advanced pulse temporal shaping seems advantageous in this regard. A promising avenue is the investigation of the intermediate wavelength regime: first data for 2 m lasers already indicates a CE improvement compared to 1m [2] , and simulations predict even better performances for wavelengths between 2 and 10 m.

IEEE
doi.org/10.1109/cleo/europe-eqec52157.2021.9542531
Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2021, pp. 1-1
EUV Generation & Imaging

Mazzotta, Z., Mathijssen, J., Eikema, K., Versolato, O., & Witte, S. (2021). TI-REX: A Tunable Infrared laser for Experiments in nanolithography. Presented at the Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2021, pp. 1-1. doi:10.1109/cleo/europe-eqec52157.2021.9542531