To address the problem of low polishing efficiency in traditional loose-abrasive chemical mechanical polishing, a humidity-controlled fixed-abrasive chemical mechanical polishing method is proposed, which uses a CeO2 pellet to perform polishing at a specific humidity level. The results of both the nano-scratch tests and the fixed-abrasive polishing experiments demonstrate that the water molecules have an irreplaceable role in the material removal of silicon and that a higher ambient humidity results in better material removal. Fixed-abrasive polishing experiments under saturated humidity can yield a surface roughness less than Ra 2 nm at an efficiency of 0.9 µm/h, and the minimum stress on the polished surface is only a few tens of megapascals. The method is validated to be effective for the stress relief process after grinding.

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Elsevier BV
Contact Dynamics

Li, G., Xiao, C., Zhang, S., Luo, S., Chen, Y., & Wu, Y. (2023). Study of the humidity-controlled CeO2 fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer. Tribol.Int., 178, 108087: 1–13. doi:10.1016/j.triboint.2022.108087