We demonstrate the efficient generation of extreme ultraviolet (EUV) light from laser-produced plasma (LPP) driven by 2 μm wavelength laser light as an alternative for 10 μm CO2 gas LPP currently employed in EUV lithography machines for high-volume manufacturing of semiconductor devices. High conversion efficiencies of laser light into “in-band” EUV photons up to 5.0% are achieved by homogeneously heating the plasma that is laser-generated from preshaped tin microdroplet targets. Scaling the laser pulse duration, spot size, and intensity yields a high in-band EUV energy output of up to 12.5 mJ. The EUV emission source size is studied under a similar parameter range and is shown to match typical etendues of EUV optic columns. Our findings make 2 μm LPP a particularly promising candidate to power future EUV nanolithography.

AIP Publishing
Appl. Phys. Lett.
EUV Plasma Processes

Mostafa, Y., Behnke, L., Engels, D., Bouza, Z., Sheil, J., Ubachs, W., & Versolato, O. (2023). Production of 13.5 nm light with 5% conversion efficiency from 2 μm laser-driven tin microdroplet plasma. Appl. Phys. Lett., 123(23), 234101: 1–7. doi:10.1063/5.0174149