We demonstrate point-scanning high-harmonic generation (HHG) microscopy of nanostructured solid samples up to the fifth harmonic order, extending harmonic microscopy beyond established second- and third-harmonic techniques. Using tailored silicon nanostructures, we directly measure harmonic point spread functions and quantify the achievable imaging resolution. Although higher harmonic orders narrow the point spread function, practical resolution is constrained by signal- and sample-dependent contrast. We apply HHG microscopy to exfoliated MoS2, distinguishing mono- and bilayer regions and reconstructing crystal orientations via polarization-resolved fourth-harmonic microscopy. These results establish HHG microscopy as a viable approach for nonlinear imaging of nanostructured semiconductor materials.

OPG
Netherlands Organisation for Scientific Research (NWO) , European Research Council (ERC) , Dutch Ministry of Economic Affairs and Climate Policy
ASML, ARCNL, VU, UvA, RUG, NWO
doi.org/10.1364/OE.603673
Opt. Express
High-Harmonic Generation and EUV Science

van Horen, T., Murzyn, K., Dziobek-Garrett, R., Corazza, F., Guery, L., van de Groep, J., Amitonova, L.& Kraus, P. (2026). High-harmonic generation microscopy of nanostructured bulk, thin-film and 2D semiconductor materials. Opt. Express, 34(19), 35821–35833.https://doi.org/10.1364/OE.603673